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Mitsubishi's new 12.5V high power MOSFET modules for commercial 2-way radios

Mitsubishi Electric has introduced two new 12.5V high power metal oxide semiconductor field effect transistor (MOSFET) devices. The two discrete devices, RD70HUF2 and RD35HUF2, are designed for use as high frequency power amplifiers

Read more >> http://www.anglia.com/newsarchive/2878.asp


This entry was posted by Anglia Components, on Wednesday, 1 December 2010.

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