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Cree technology breakthrough enables 50 amp silicon carbide power devices, bringing efficiency and cost savings to a broader range of high power applications

The new 50A SiC devices, which include an industry first 1700V Z-FET MOSFET and three Z-Rec Schottky diodes, will enable a new generation of power systems with record-setting energy efficiency and lower cost of ownership.

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This entry was posted by Anglia Components, on Thursday, 28 February 2013.

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