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Introducing Silicon Carbide (SiC) MOSFETs from ROHM Semiconductor, samples available from Anglia

 

In recent years Silicon Carbide (SiC) has emerged as one of the most viable candidates in the search for a next-generation, low-loss power semiconductor element due to its low ON resistance and superior high temperature, high frequency.

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This entry was posted by Anglia Components, on Wednesday 25 November 2020.

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